This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V CE) or Base-Emitter (V BE) could be 200 and 900 mV respectively. When this transistor is fully biased, then it can allow a maximum of 800mA to flow across the collector and emitter. To bias a transistor we have to supply current to base pin, this current (I B) should be limited to 5mA. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor.

2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. Note: Complete Technical Details can be found in the 2N2222A datasheet, given at the end of this page.īC549, BC636, BC639, BC547, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200 2N2222A Equivalent TransistorsĢN2907(PNP), 2N3904(PNP), 2N3906 (PNP), BC637, S9014, BC148, 2N4403, MPS2222, PN2222, KN2222, KTN2222ĢN2222A is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. Collector Emitter Voltage (V CE) is 30V.

Continuous Collector current (I C) is 800mA.

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